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Siliconix Releases First 20-V and 30-V N-Channel TrenchFET Gen III Power MOSFETs WithTurboFET TechnologyThe 20-V SiS426DN device offers the industry's lowest on-resistance times gate charge for a device with this voltage rating in the 3-mm by 3-mm PowerPAK® 1212-8 footprint. This key figure of merit (FOM) for MOSFETs in dc-to-dc converters is 76.6 m-nC at 4.5 V and 117.60 m-nC at 10 V for the SiS426DN, which features a low typical gate charge of 13.2 nC at a 4.5-V gate drive and 28 nC at a 10-V gate drive. [Read more...] |
Worcester, MA, September 7, 2006 Allegro announces several new devices to complement their existing portfolio of linear Hall-effect sensors. These new devices are unique to the market because they are the first analog-output Hall-effect sensors that operate down to 2.5 V, include a sleep enable pin and have high impedance outputs while in sleep mode. This new family of Hall-effect sensors are targeted at the consumer market and address specific application demands.
The low-voltage operation allow these devices to be used in battery-operated applications, which traditionally provide less than a 5 V supply. By employing a logic level on the sleep enable pin, users are able to configure the desired power consumption for the device by modulating when the device is active (~ 4 mA current draw) and sleeping (~ 25 µA). Additionally during the sleep mode the output is not valid, high impedance, allowing the outputs from multiple devices to be conected to and sampled by a single A/D converter.
The A1391/2 are differentiated by their gains: 1.25 mV/G and 2.50 m/G, respectivly. Similarly the A1393/5 are also differentiated by their gains: 5.00 mV/G and 10.0 mV/G, respectivly. All devices are available in a miniature, low profile, lead-less package: 2.00 mm by 3.00 mm by 0.75 mm micro-leaded package.
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