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Electronic Engineering News Digest |
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Siliconix Releases First 20-V and 30-V N-Channel TrenchFET Gen III Power MOSFETs WithTurboFET TechnologyThe 20-V SiS426DN device offers the industry's lowest on-resistance times gate charge for a device with this voltage rating in the 3-mm by 3-mm PowerPAK® 1212-8 footprint. This key figure of merit (FOM) for MOSFETs in dc-to-dc converters is 76.6 m-nC at 4.5 V and 117.60 m-nC at 10 V for the SiS426DN, which features a low typical gate charge of 13.2 nC at a 4.5-V gate drive and 28 nC at a 10-V gate drive. [Read more...] |
The AD8158 is an asynchronous, protocol agnostic, quad-lane 2:1 switch with a total of 12 differential PECL/CML compatible inputs and 12 differential CML outputs. The signal path supports NRZ signaling with data rates up to 6.5 Gbps per lane. Each lane offers programmable receive equalization, programmable output pre-emphasis, programmable output levels, and loss-of-signal detection. The AD8158’s non-blocking switch-core implements a 2:1 multiplexer and 1:2 demultiplexer per lane and supports independent lane switching through the four select pins, SEL[3:0]. Each port is a 4-lane link. Every lane implements an asynchronous path supporting DC - 6.5 Gbps NRZ data, fully independent of other lanes. The AD8158 has low latency and very low lane-to-lane skew.
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