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Siliconix Releases First 20-V and 30-V N-Channel TrenchFET Gen III Power MOSFETs WithTurboFET TechnologyThe 20-V SiS426DN device offers the industry's lowest on-resistance times gate charge for a device with this voltage rating in the 3-mm by 3-mm PowerPAK® 1212-8 footprint. This key figure of merit (FOM) for MOSFETs in dc-to-dc converters is 76.6 m-nC at 4.5 V and 117.60 m-nC at 10 V for the SiS426DN, which features a low typical gate charge of 13.2 nC at a 4.5-V gate drive and 28 nC at a 10-V gate drive. [Read more...] |
The AD8563 is a precision instrumentation amplifier featuring low noise, rail-to-rail output and a power-saving shutdown mode. The AD8563 also features low offset voltage and drift coupled with high common-mode rejection. In shutdown mode, the total supply current is reduced to less than 4 A.
The AD8563 is capable of operating from 2.7 V to 5.5 V. With a low offset voltage of 30 V, an offset voltage drift of 0.5 V/°C, and a voltage noise of only 1 V p-p (0.01 Hz to 10 Hz), the AD8563 is ideal for applications where error sources cannot be tolerated. Precision instrumentation, position and pressure sensors, medical instrumentation, and strain gauge amplifiers benefit from the low noise, low input bias current, and high common-mode rejection. The small footprint and low cost are ideal for high volume applications.
The small package and low power consumption allow maximum channel density and minimum board size for space-critical equipment and portable systems.
The AD8563 is specified over the industrial temperature range from 40°C to +125°C. The AD8563 is available in a Pb-free, 10-lead MSOP.
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