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Electronic Engineering News Digest |
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Siliconix Releases First 20-V and 30-V N-Channel TrenchFET Gen III Power MOSFETs WithTurboFET TechnologyThe 20-V SiS426DN device offers the industry's lowest on-resistance times gate charge for a device with this voltage rating in the 3-mm by 3-mm PowerPAK® 1212-8 footprint. This key figure of merit (FOM) for MOSFETs in dc-to-dc converters is 76.6 m-nC at 4.5 V and 117.60 m-nC at 10 V for the SiS426DN, which features a low typical gate charge of 13.2 nC at a 4.5-V gate drive and 28 nC at a 10-V gate drive. [Read more...] |
The AD8682 and AD8684 are dual low power, precision (1mV)JFET amplifier featuring excellent speed at low supply currents.The slew rate is typically 9V/s with a supply current under 250A per amplifier. These unity-gain stable amplifiers have atypical gain bandwidth of 4 MHz. The JFET input stage ensuresbias current is typically a few picoamps and below 500pA overthe full temperature operating range. The devices are ideal forportable, low power applications, especially with high sourceimpedance. The device is unity gain stable and can drive highercap loads (G=1, non-inverting) as an example of its excellentdynamic response over a wide range of conditions, deliveringDC precision performance at low quiescent currents.
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