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Siliconix Releases First 20-V and 30-V N-Channel TrenchFET Gen III Power MOSFETs WithTurboFET TechnologyThe 20-V SiS426DN device offers the industry's lowest on-resistance times gate charge for a device with this voltage rating in the 3-mm by 3-mm PowerPAK® 1212-8 footprint. This key figure of merit (FOM) for MOSFETs in dc-to-dc converters is 76.6 m-nC at 4.5 V and 117.60 m-nC at 10 V for the SiS426DN, which features a low typical gate charge of 13.2 nC at a 4.5-V gate drive and 28 nC at a 10-V gate drive. [Read more...] |
The ADG1206 and ADG1207 are monolithic iCMOS analogmultiplexers comprising sixteen single channels and eightdifferential channels, respectively. The ADG1206 switches oneof sixteen inputs to a common output as determined by the 4-bit binary address lines A0, A1,A2 and A3. The ADG1207switches one of eight differential inputs to a commondifferential output as determined by the 3-bit binary addresslines A0, A1 and A2. An EN input on both devices is used toenable or disable the device. When disabled, all channels areswitched OFF.
The iCMOS (industrial-CMOS) modular manufacturingprocess combines high-voltage CMOS (complementary metaloxidesemiconductor) and bipolar technologies. It enables thedevelopment of a wide range of high performance analog ICscapable of 33-V operation in a footprint that no othergeneration of high-voltage parts has been able to achieve.Unlike analog ICs using conventional CMOS processes, iCMOScomponents can tolerate high supply voltages, while providingincreased performance, dramatically lower power consumption, and reduced package size.
The ultralow capacitance and charge injection of thesemultiplexers make them ideal solutions for data acquisition andsample-and-hold applications, where low glitch and fast settlingare required. Fast switching speed coupled with high signalbandwidth make the parts suitable for video signal switching.iCMOS construction ensures ultralow power dissipation,making the parts ideally suited for portable and batterypowered instruments.
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