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Siliconix Releases First 20-V and 30-V N-Channel TrenchFET Gen III Power MOSFETs WithTurboFET TechnologyThe 20-V SiS426DN device offers the industry's lowest on-resistance times gate charge for a device with this voltage rating in the 3-mm by 3-mm PowerPAK® 1212-8 footprint. This key figure of merit (FOM) for MOSFETs in dc-to-dc converters is 76.6 m-nC at 4.5 V and 117.60 m-nC at 10 V for the SiS426DN, which features a low typical gate charge of 13.2 nC at a 4.5-V gate drive and 28 nC at a 10-V gate drive. [Read more...] |
The ADG796A is a monolithic CMOS device comprising six 2:1 multiplexer/demultiplexers controllable via a standard I2C serial interface. The CMOS process provides ultralow power dissipation, yet offers high switching speed and low on resistance.
The on-resistance profile is very flat over the full analog input range and wide bandwidth ensures excellent linearity and low distortion. These features, combined with a wide input signal range make the ADG796A the ideal switching solution for a wide range of TV applications including S-Video, YPbPr and RGB video switches.
The switches conduct equally well in both directions when on. In the off condition, signal levels up to the supplies are blocked. The ADG796A switches exhibit break-before-make switching action.
The integrated I2C interface provides a large degree of flexibility in the system design. It has two user adjustable I2C address pins that allow up to four devices on the same bus. This allows the user to expand the capability of the device by increasing the size of the switching array.
The ADG796A operates from a single 3 V or 5 V supply voltage and is available in a compact 4 mm 4 mm body, 24-lead, leadfree LFCSP.
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