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Siliconix Releases First 20-V and 30-V N-Channel TrenchFET Gen III Power MOSFETs WithTurboFET TechnologyThe 20-V SiS426DN device offers the industry's lowest on-resistance times gate charge for a device with this voltage rating in the 3-mm by 3-mm PowerPAK® 1212-8 footprint. This key figure of merit (FOM) for MOSFETs in dc-to-dc converters is 76.6 m-nC at 4.5 V and 117.60 m-nC at 10 V for the SiS426DN, which features a low typical gate charge of 13.2 nC at a 4.5-V gate drive and 28 nC at a 10-V gate drive. [Read more...] |
The ADL5530 is a broadband, fixed-gain, linear amplifier that operates at frequencies up to 1000 MHz. The device can be used in a wide variety of wired and wireless devices, including cellular, broadband, CATV, and LMDS/MMDS applications.
The ADL5530 provides a gain of 16.5 dB, which is stable over frequency, temperature, power supply, and from device to device. It achieves an OIP3 of 37 dBm with an output compression point of 21.8 dB and a noise figure of 3 dB.
This amplifier is single-ended and internally matched to 50 with an input return loss of 11 dB. Only input/output ac-coupling capacitors, a power supply decoupling capacitor, and an external inductor are required for operation.
The ADL5530 operates with supply voltages of 3 V or 5 V with a supply current of 110 mA.
The ADL5530 is fabricated on a GaAs pHEMPT process. The device is packaged in a 3 mm 2 mm LFCSP that uses an exposed paddle for excellent thermal impedance. It operates from -40°C to +85°C. A fully populated evaluation board is also available.
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