![]() |
Electronic Engineering News Digest |
COMPONENT NEWS | INDUSTRY NEWS | RoHS/WEEE NEWS |
|
|
|
Siliconix Releases First 20-V and 30-V N-Channel TrenchFET Gen III Power MOSFETs WithTurboFET TechnologyThe 20-V SiS426DN device offers the industry's lowest on-resistance times gate charge for a device with this voltage rating in the 3-mm by 3-mm PowerPAK® 1212-8 footprint. This key figure of merit (FOM) for MOSFETs in dc-to-dc converters is 76.6 m-nC at 4.5 V and 117.60 m-nC at 10 V for the SiS426DN, which features a low typical gate charge of 13.2 nC at a 4.5-V gate drive and 28 nC at a 10-V gate drive. [Read more...] |
The ADM1185 is an integrated four channel voltage monitoring device. A 2.7V to 5.5V power supply is required on the VCC pin to power the device.
Four precision comparators monitor four voltage rails on the VIN1-VIN4 pins. All comparators have a 0.6V reference with a worst-case accuracy of 0.8%. Resistor networks external to the VIN1-VIN4 pins set the trip points
There are four open-drain outputs on the device. The device can be configured so that the outputs turn on numerous regulators or DC-DC converters in a required sequence. The last output can be used as a Power Good signal. Once the power up sequence is complete a fault on the voltage monitored by the VIN1 pin results in the deassertion of all outputs while a fault on any other input results in the deassertion of the Power Good output
Original text is here