![]() |
Electronic Engineering News Digest |
COMPONENT NEWS | INDUSTRY NEWS | RoHS/WEEE NEWS |
|
|
|
Siliconix Releases First 20-V and 30-V N-Channel TrenchFET Gen III Power MOSFETs WithTurboFET TechnologyThe 20-V SiS426DN device offers the industry's lowest on-resistance times gate charge for a device with this voltage rating in the 3-mm by 3-mm PowerPAK® 1212-8 footprint. This key figure of merit (FOM) for MOSFETs in dc-to-dc converters is 76.6 m-nC at 4.5 V and 117.60 m-nC at 10 V for the SiS426DN, which features a low typical gate charge of 13.2 nC at a 4.5-V gate drive and 28 nC at a 10-V gate drive. [Read more...] |
The ADN4600 is an asynchronous, nonblocking crosspoint switch with eight differential PECL-/CML-compatible inputs with programmable equalization and eight differential CML outputs with programmable output levels and pre-emphasis or de-emphasis. The operation of this device is optimized for NRZ data at rates up to 4.25 Gbps.
The receive inputs provide programmable equalization with nine settings to compensate for up to 30 in. of FR4 and programmable pre-emphasis with seven settings to compensate for up to 30 in. of FR4 at 4.25 Gbps. Each channel also provides programmable loss-of-signal detection.
The ADN4600 nonblocking switch core implements an 8 8 crossbar and supports independent channel switching through the I2C control interface. Every channel implements an asynchronous path supporting NRZ data rates from dc to 4.25 Gbps. Each channel is fully independent of other channels. The ADN4600 has low latency and very low channel-to-channel skew.
The main application for the ADN4600 is to support switching on the backplane, line card, or cable interface sides of serial links.
The ADN4600 is packaged in a 9 mm 9 mm, 64-lead LFCSP package and operates from 40°C to +85°C.
APPLICATIONS
Original text is here