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Electronic Engineering News Digest |
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Siliconix Releases First 20-V and 30-V N-Channel TrenchFET Gen III Power MOSFETs WithTurboFET TechnologyThe 20-V SiS426DN device offers the industry's lowest on-resistance times gate charge for a device with this voltage rating in the 3-mm by 3-mm PowerPAK® 1212-8 footprint. This key figure of merit (FOM) for MOSFETs in dc-to-dc converters is 76.6 m-nC at 4.5 V and 117.60 m-nC at 10 V for the SiS426DN, which features a low typical gate charge of 13.2 nC at a 4.5-V gate drive and 28 nC at a 10-V gate drive. [Read more...] |
The ADP2105/6/7 are low quiescent current synchronous stepdown DC-DC converters in a compact 4mm x 4mm LFCSP package. At medium to high load currents, these devices use current-mode, constant-frequency pulse width modulation (PWM) control scheme for excellent stability and transient response. To ensure the longest battery life in portable applications, the ADP2105/6/7 use a power-saving pulse frequency modulation (PFM) control scheme under light load conditions that reduces switching frequency.
The ADP2105/6/7 run from input voltages of 2.7 to 5.5 V allowing single Li+ /Li-polymer cell, multiple Alkaline/NiMH cells, PCMCIA, and other standard power sources. The output voltage of ADP2105/6/7-ADJ is adjustable from 0.8V to the input voltage while the ADP2105/6/7-XX indicate pre-set output voltage options of 3.3, 1.8, 1.5, or 1.2V. Each of these variations is available in 3 maximum current levels, 1A (ADP2105), 1.5A (ADP2106), and 2A (ADP2107). The power switch and synchronous rectifier are integrated for minimal external part count and high efficiency. During logic-controlled shutdown, the input is disconnected from the output and it draws less than 0.1A from the input source. Other key features include under-voltage lockout to prevent deep-battery discharge and programmable soft-start to limit inrush current at startup.
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