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Electronic Engineering News Digest |
COMPONENT NEWS | INDUSTRY NEWS | RoHS/WEEE NEWS |
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Siliconix Releases First 20-V and 30-V N-Channel TrenchFET Gen III Power MOSFETs WithTurboFET TechnologyThe 20-V SiS426DN device offers the industry's lowest on-resistance times gate charge for a device with this voltage rating in the 3-mm by 3-mm PowerPAK® 1212-8 footprint. This key figure of merit (FOM) for MOSFETs in dc-to-dc converters is 76.6 m-nC at 4.5 V and 117.60 m-nC at 10 V for the SiS426DN, which features a low typical gate charge of 13.2 nC at a 4.5-V gate drive and 28 nC at a 10-V gate drive. [Read more...] |
| Features |
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| Description |
The INA206, INA207, and INA208 are a family of high-side, current-shunt monitors with voltage output, dual comparators, and voltage reference. The INA206, INA207, and INA208 can sense drops across shunts at common-mode voltages from -16V to +80V. The INA206, INA207, and INA208 are available with three output voltage scales: 20V/V, 50V/V, and 100V/V, with up to 500kHz bandwidth.
The INA206, INA207, and INA208 also incorporate two open-drain comparators with internal 0.6V references. On 14-pin versions, the comparator references can be overridden by external inputs. Comparator 1 includes a latching capability, and Comparator 2 has a user-programmable delay on 14-pin versions. 14-pin versions also provide a 1.2V reference output.
The INA206, INA207, and INA208 operate from a single +2.7V to +18V supply. They are specified over the extended operating temperature range of -40°C to +125°C.
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