![]() |
Electronic Engineering News Digest |
COMPONENT NEWS | INDUSTRY NEWS | RoHS/WEEE NEWS |
|
|
|
Siliconix Releases First 20-V and 30-V N-Channel TrenchFET Gen III Power MOSFETs WithTurboFET TechnologyThe 20-V SiS426DN device offers the industry's lowest on-resistance times gate charge for a device with this voltage rating in the 3-mm by 3-mm PowerPAK® 1212-8 footprint. This key figure of merit (FOM) for MOSFETs in dc-to-dc converters is 76.6 m-nC at 4.5 V and 117.60 m-nC at 10 V for the SiS426DN, which features a low typical gate charge of 13.2 nC at a 4.5-V gate drive and 28 nC at a 10-V gate drive. [Read more...] |
| Features |
All trademarks are the property of their respective owners.
| Description |
The OPAx365 zerř-crossover series rail-to-rail highperformance CMOS operational amplifiers are optimized for very low voltage, single-supply applications. Rail-to-rail input/output, low-noise (4.5nV/Hz) and high-speed operations (50MHz Gain Bandwidth) make them ideal for driving sampling analog-to-digital converters (ADCs). Applications incude audio, signal conditioning, and sensor amplification. The OPA365 family of op amps are well-suited for cell phone power amplifier control loops.
Special features include excellent common-mode rejection ratio (CMRR), no input stage crossover distortion, high input impedance and rail-to-rail input and output swing. The input common-mode range includes both the negative and positive supplies. The output voltage swing is within 10mV of the rails.
The OPA365 (single version) is available in the micro-SIZE SOT23-5 and SO-8 packages. The OPA2365 (dual version) is offered in the microSIZE DFN-8 (3mm x 3mm) and SO-8 packages. All versions are specified for operation from -40°C to +125°C. Single and dual versions have identical specifications for maximum design flexibility.
Original text is here