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Electronic Engineering News Digest |
COMPONENT NEWS | INDUSTRY NEWS | RoHS/WEEE NEWS |
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Siliconix Releases First 20-V and 30-V N-Channel TrenchFET Gen III Power MOSFETs WithTurboFET TechnologyThe 20-V SiS426DN device offers the industry's lowest on-resistance times gate charge for a device with this voltage rating in the 3-mm by 3-mm PowerPAK® 1212-8 footprint. This key figure of merit (FOM) for MOSFETs in dc-to-dc converters is 76.6 m-nC at 4.5 V and 117.60 m-nC at 10 V for the SiS426DN, which features a low typical gate charge of 13.2 nC at a 4.5-V gate drive and 28 nC at a 10-V gate drive. [Read more...] |
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| Description |
The TPA2032D1 (2V/V gain), TPA2033D1 (3V/V gain), and TPA2034D1 (4V/V gain) are 2.75W high efficiency filterfree classD audio power amplifiers, each in an approximately 1.5mm × 1.5mm wafer chip scale package (WCSP) that requires only one external component. The pinout is the same as the TPA2010D1 except that the external gain setting input resistors required by the TPA2010D1 are integrated into the fixed gain TPA203xD1 family.
Features like 75dB PSRR and improved RFrectification immunity with a very small PCB footprint (WCSP amplifier plus single decoupling cap) make the TPA203xD1 family ideal for wireless handsets. A fast startup time of 3.2 ms with minimal pop makes the TPA203xD1 family ideal for PDA applications.
In wireless handsets, the earpiece, speaker phone, and melody ringer can each be driven by a TPA203xD1. The TPA203xD1 family has a low 27µV noise floor, Aweighted.
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