![]() |
Electronic Engineering News Digest |
COMPONENT NEWS | INDUSTRY NEWS | RoHS/WEEE NEWS |
|
|
|
Vishay Siliconix Releases New 20-V and 30-VP-Channel Power MOSFETs With Industry’s Lowest On-ResistanceThe devices will be used as the adaptor switch and for load switching applications in notebook computers and industrial/general systems. Adaptor switches (switching between the adaptor/wall power and the battery power) are always on and drawing current. The lower on-resistance of the Si7135DP and Si7633DP translates into lower power consumption, saving power and prolonging battery life between charges. [Read more...] |
DURHAM, NC, NOVEMBER 1, 2006 — Today Cree, Inc. (Nasdaq: CREE) announced that sample quantities of two new general-purpose high-power gallium nitride (GaN) high electron mobility transistors (HEMTs) are now available for order. These new components can be used to enable a variety of broadband applications to perform more efficiently than with standard LDMOS transistors.
The new 10-watt CGH40010 and 45-watt CGH40045 operate at up to 4 GHz with 14 dB of associated power gain and 65-percent drain efficiency when operated at 28 volts. Their efficiency, high gain and broad bandwidth make them ideal components for linear and compressed amplifier circuits. Targeted applications include general-purpose broadband amplifiers and critical communications systems used by police, fire departments and Homeland Security.
“Cree’s GaN HEMT technology can significantly outperform existing gallium arsenide or silicon LDMOS technology in broadband systems that need wide bandwidth, low power or high-efficiency performance,” said Jim Milligan, Cree’s product manager for wide bandgap radio frequency products.
Additional information about Cree wireless products may be obtained by calling Cree at 919-313-5300 or by visiting www.cree.com/wireless.
Original text is here