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Electronic Engineering News Digest |
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Siliconix Releases First 20-V and 30-V N-Channel TrenchFET Gen III Power MOSFETs WithTurboFET TechnologyThe 20-V SiS426DN device offers the industry's lowest on-resistance times gate charge for a device with this voltage rating in the 3-mm by 3-mm PowerPAK® 1212-8 footprint. This key figure of merit (FOM) for MOSFETs in dc-to-dc converters is 76.6 m-nC at 4.5 V and 117.60 m-nC at 10 V for the SiS426DN, which features a low typical gate charge of 13.2 nC at a 4.5-V gate drive and 28 nC at a 10-V gate drive. [Read more...] |
| Features |
| Description |
ADS5546 is a high performance 14-bit, 190-MSPS A/D converter. It offers state-of-the art functionality and performance using advanced techniques to minimize board space. Using an internal sample and hold and low jitter clock buffer, the ADC supports both high SNR and high SFDR at high input frequencies. It features programmable gain options that can be used to improve SFDR performance at lower full-scale analog input ranges.
In a compact 48-pin QFN, the device offers fully differential LVDS DDR (Double Data Rate) interface while parallel CMOS outputs can also be selected. Flexible output clock position programmability is available to ease capture and trade-off setup for hold times. At lower sampling rates, the ADC can be operated at scaled down power with no loss in performance. ADS5546 includes an internal reference, while eliminating the traditional reference pins and associated external decoupling. The device also supports an external reference mode.
The device is specified over the industrial temperature range (-40°C to 85°C).
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