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Electronic Engineering News Digest |
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The IRF6718 features IR?ˆ™s latest generation silicon technology in a new large can DirectFET package to deliver an extremely low RDS(on) of only 0.5mOhm (typical) at 10V Vgsin a 60 percent smaller footprint and 85 percent lower profile than a D2PAK. The new device significantly reduces conduction losses associated with the pass element to dramatically improve the efficiency of the entire system.
?ˆ?The IRF6718 is IR?ˆ™s first device hosted in a large can DirectFET package. Its significantly lower RDS(on) compared to competing devicesachieves superior efficiency and thermal performance for high density DC-DC applications such as servers in a smaller footprint than a D2PAK. Moreover, board space and overall system cost can be reduced when compared to existing solutions as fewer parts are required for a given power loss,?ˆ? said
In addition, the IRF6718 provides an improved safe operating area (SOA) capability for E-fuse and hot swap circuits. The device is offered lead free and is RoHS compliant.
The IRF6718 is an expansion of IR?ˆ™s 25V DirectFET family targeting DC switch applications. The IRF6717 medium can and IRF6713 small can DirectFETs also target DC switch applications and provide industry best RDS(on) within their respective PCB footprints.
More information is available on the
Availability and Pricing
Pricing for the IRF6718L2TR1PbF begins at US
About
Trademark Notice
IR?® and DirectFET?®are trademarks of
Source:
International Rectifier
Sian Cummins, 1 310 252 7148
scummin1@irf.com
Original text is here