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Electronic Engineering News Digest |
COMPONENT NEWS | INDUSTRY NEWS | RoHS/WEEE NEWS |
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Siliconix Releases First 20-V and 30-V N-Channel TrenchFET Gen III Power MOSFETs WithTurboFET TechnologyThe 20-V SiS426DN device offers the industry's lowest on-resistance times gate charge for a device with this voltage rating in the 3-mm by 3-mm PowerPAK® 1212-8 footprint. This key figure of merit (FOM) for MOSFETs in dc-to-dc converters is 76.6 m-nC at 4.5 V and 117.60 m-nC at 10 V for the SiS426DN, which features a low typical gate charge of 13.2 nC at a 4.5-V gate drive and 28 nC at a 10-V gate drive. [Read more...] |
| Features |
| Description |
The ONET1191V is a high-speed, 3.3-V laser driver designed to directly modulate VCSELs at data rates up to 11.3 Gbps.
The device provides a two-wire serial interface which allows digital control of the modulation and bias currents, eliminating the need for external components. An optional input equalizer can be used for equalization of up to 300 mm (12 inches) of microstrip or stripline transmission line on FR4 printed-circuit boards.
The ONET1191V includes an integrated automatic power-control (APC) loop as well as circuitry to support laser safety and transceiver management systems.
The VCSEL driver is characterized for operation from -40°C to 85°C ambient temperatures and is available in a small-footprint, 4-mm × 4-mm, 20-pin QFN package.
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