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Electronic Engineering News Digest |
COMPONENT NEWS | INDUSTRY NEWS | RoHS/WEEE NEWS |
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Siliconix Releases First 20-V and 30-V N-Channel TrenchFET Gen III Power MOSFETs WithTurboFET TechnologyThe 20-V SiS426DN device offers the industry's lowest on-resistance times gate charge for a device with this voltage rating in the 3-mm by 3-mm PowerPAK® 1212-8 footprint. This key figure of merit (FOM) for MOSFETs in dc-to-dc converters is 76.6 m-nC at 4.5 V and 117.60 m-nC at 10 V for the SiS426DN, which features a low typical gate charge of 13.2 nC at a 4.5-V gate drive and 28 nC at a 10-V gate drive. [Read more...] |
| Features |
| Description |
The TLK6201EA is a versatile, high-speed, limiting equalizer for applications in digital high-speed links with data rates up to 6.25 Gbps.
This device provides a high-frequency boost of 13 dB on the received data at 3.125 GHz, as well as sufficient gain to ensure a fully differential output swing for input signals as low as 100 mVp-p (at the input of a lossy interconnect line).
Four de-emphasis levels can be selected on the transmit side to provide up to 12 dB of additional high-frequency loss compensation.
The high input-signal dynamic range ensures low-jitter output signals even when overdriven with input signal swings as high as 2000 mVp-p.
The TLK6201EA implements fixed loss-of-signal detection, which can be used to implement a squelch function by connecting the LOS output to the adjacent DIS input.
The TLK6201EA is available in a small-footprint, 3-mm × 3-mm, 16-pin QFN package. It requires a single 3.3-V supply.
This power-efficient equalizer is characterized for operation from -40°C to 85°C.
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