![]() |
Electronic Engineering News Digest |
COMPONENT NEWS | INDUSTRY NEWS | RoHS/WEEE NEWS |
|
|
|
Siliconix Releases First 20-V and 30-V N-Channel TrenchFET Gen III Power MOSFETs WithTurboFET TechnologyThe 20-V SiS426DN device offers the industry's lowest on-resistance times gate charge for a device with this voltage rating in the 3-mm by 3-mm PowerPAK® 1212-8 footprint. This key figure of merit (FOM) for MOSFETs in dc-to-dc converters is 76.6 m-nC at 4.5 V and 117.60 m-nC at 10 V for the SiS426DN, which features a low typical gate charge of 13.2 nC at a 4.5-V gate drive and 28 nC at a 10-V gate drive. [Read more...] |
The LT3476 senses output current at the high side of the LED, enabling buck, buck-boost or boost configurations. With an external sense resistor, the user programs the output current range of each channel. Each of the 4 independent driver channels utilizes an internal 1.5A, 36V NPN switch. Other features include open LED protection and thermal limiting.
The LT3476EUHF is available from stock in a thermally enhanced 38-lead 5mm x 7mm DFN package. 1,000-piece pricing starts at $4.64 each and the device is available from stock.
Original text is here