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Electronic Engineering News Digest |
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Siliconix Releases First 20-V and 30-V N-Channel TrenchFET Gen III Power MOSFETs WithTurboFET TechnologyThe 20-V SiS426DN device offers the industry's lowest on-resistance times gate charge for a device with this voltage rating in the 3-mm by 3-mm PowerPAK® 1212-8 footprint. This key figure of merit (FOM) for MOSFETs in dc-to-dc converters is 76.6 m-nC at 4.5 V and 117.60 m-nC at 10 V for the SiS426DN, which features a low typical gate charge of 13.2 nC at a 4.5-V gate drive and 28 nC at a 10-V gate drive. [Read more...] |
The LT3505’s low VCESAT (350mV @1A) internal switch offers efficiencies of over 90%, maximizing battery run-time. Its internal reference enables output voltages as low as 0.78V. Internal cycle-by-cycle current limit provides protection against shorted outputs while soft-start eliminates input current surge during start-up. The low current (<2uA) shutdown provides easy power management in battery-powered systems.
The LT3505EDD is available from stock in a thermally enhanced 3mm x 3mm DFN-8 package. A higher temperature grade “I” version, the LT3505IDD, is also available from stock. Pricing starts at $2.40 each and $2.88 each respectively for 1,000-piece quantities.
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