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Electronic Engineering News Digest |
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Siliconix Releases First 20-V and 30-V N-Channel TrenchFET Gen III Power MOSFETs WithTurboFET TechnologyThe 20-V SiS426DN device offers the industry's lowest on-resistance times gate charge for a device with this voltage rating in the 3-mm by 3-mm PowerPAK® 1212-8 footprint. This key figure of merit (FOM) for MOSFETs in dc-to-dc converters is 76.6 m-nC at 4.5 V and 117.60 m-nC at 10 V for the SiS426DN, which features a low typical gate charge of 13.2 nC at a 4.5-V gate drive and 28 nC at a 10-V gate drive. [Read more...] |
The receivers of the LTC2856/LTC2857/LTC2858 hves a one-eighth unit load, supporting up to 256 devices on the bus, while the drivers of all ICs maintain a high output impedance over the entire common mode range when disabled or when the supply is removed. Excessive power dissipation caused by bus contention or a fault is prevented by current limiting all outputs and by thermal shutdown.
The rich combination of features makes the LTC2856/LTC2857/LTC2858 an ideal fit across various applications in the consumer, industrial, medical and automotive markets. The ICs are offered in 8-pin and 10 -pin MSOP and 3mm x 3mm DFN packages. Specified over the commercial and industrial temperature ranges and available from stock, pricing for the LTC2856/LTC2857/LTC2858 begins at $1.45 each in 1000-piece quantities.
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