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Electronic Engineering News Digest |
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Siliconix Releases First 20-V and 30-V N-Channel TrenchFET Gen III Power MOSFETs WithTurboFET TechnologyThe 20-V SiS426DN device offers the industry's lowest on-resistance times gate charge for a device with this voltage rating in the 3-mm by 3-mm PowerPAK® 1212-8 footprint. This key figure of merit (FOM) for MOSFETs in dc-to-dc converters is 76.6 m-nC at 4.5 V and 117.60 m-nC at 10 V for the SiS426DN, which features a low typical gate charge of 13.2 nC at a 4.5-V gate drive and 28 nC at a 10-V gate drive. [Read more...] |
The LTC3547 uses internal switches with an RDS(ON) of only 0.75 Ohm (N-Channel) and 0.80 Ohm (P-Channel) to deliver efficiencies as high as 96%. It also utilizes low dropout 100% duty cycle operation to allow output voltages up to VIN, further extending battery run-time. The LTC3547 incorporates low ripple Burst Mode® operation, offering only 40uA no load quiescent current (both channels) with only 20mVP-P of output ripple. Shutdown current is less than 1uA, further extending battery life. Each channel has independent internal soft-start, enabling design flexibility. Other features include short-circuit and over-temperature protection.
The LTC3547EDDB is available from stock in an 8-lead 3mm x 2mm DFN package. Pricing starts at $1.95 each in 1,000-piece quantities.
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