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Electronic Engineering News Digest |
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Siliconix Releases First 20-V and 30-V N-Channel TrenchFET Gen III Power MOSFETs WithTurboFET TechnologyThe 20-V SiS426DN device offers the industry's lowest on-resistance times gate charge for a device with this voltage rating in the 3-mm by 3-mm PowerPAK® 1212-8 footprint. This key figure of merit (FOM) for MOSFETs in dc-to-dc converters is 76.6 m-nC at 4.5 V and 117.60 m-nC at 10 V for the SiS426DN, which features a low typical gate charge of 13.2 nC at a 4.5-V gate drive and 28 nC at a 10-V gate drive. [Read more...] |
The LTC3824 provides step-down solutions for applications that cover a broad range of inputs, from battery powered instruments to automotive applications. The LTC3824 drives an external P-channel MOSFET and can operate at 100% duty cycle for the lowest possible dropout voltage, allowing VOUT to approach VIN. Its current mode architecture provides fast line and load transient response as well as cycle-by-cycle overcurrent protection. Additional features include short-circuit protection, adjustable soft-start and overvoltage protection. The LTC3824 can be programmed to a fixed frequency from 100kHz to 600kHz or for noise sensitive requirements, can be synchronized to an external clock over the same range. In addition, the output voltage can be adjusted over a wide range from 0.8V to VIN.
The LTC3824 is offered in a 10-pin thermally enhanced MSOP package. The operating temperature for the LTC3824EMSE is -40ºC to 85ºC and for the LTC3824IMSE is -40°C to 125°C. 1,000-piece price starts at $1.95 each.
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