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Siliconix Releases First 20-V and 30-V N-Channel TrenchFET Gen III Power MOSFETs WithTurboFET TechnologyThe 20-V SiS426DN device offers the industry's lowest on-resistance times gate charge for a device with this voltage rating in the 3-mm by 3-mm PowerPAK® 1212-8 footprint. This key figure of merit (FOM) for MOSFETs in dc-to-dc converters is 76.6 m-nC at 4.5 V and 117.60 m-nC at 10 V for the SiS426DN, which features a low typical gate charge of 13.2 nC at a 4.5-V gate drive and 28 nC at a 10-V gate drive. [Read more...] |
The LTC3872 drives an external N-channel MOSFET to deliver the load current with high efficiency. Also, its current mode architecture allows cycle-by-cycle current limiting, lower output ripple voltage, low noise and excellent line and load transient response. With pulse skipping operation at light loads, high efficiency is preserved, while the low operating current of 250uA and shutdown current of 8uA extend battery life. The LTC3872 provides excellent AC and DC load and line regulation with ±1.5% output voltage accuracy. Additional system and IC protection features include an internal soft start which may be increased with an external capacitor, and precision under-voltage lockout.
The LTC3872 is offered in a thermally enhanced low-profile (0.75mm) 8-lead 2mm x 3mm DFN package, as well as the ThinSOT package. The device is rated for -40ºC to 125ºC junction temperature operation. 1,000-piece pricing starts at $1.80 each.
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