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Electronic Engineering News Digest |
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Vishay Upgrades 5-V Infrared Receiver SeriesVishay Intertechnology (NYSE: VSH) today announced that it is upgrading the performance of its 5-V infrared receivers with a new-generation IC that increases sensitivity of the device by 15 % while improving pulse width accuracy. The upgraded devices can be identified on the Vishay Web site by their part numbers beginning with TSOP2X.., TSOP4X.., TSOP58X.., and TSOP59X.., and by the word "New" in the datasheet title. [Read more...] |
| Features |
| Description |
The TPS28225 is a high-speed driver for N-channel complimentary driven power MOSFETs with adaptive dead-time control. This driver is optimized for use in variety of high-current one and multi-phase dc-to-dc converters. The TPS28225 is a solution that provides highly efficient, small size low EMI emmissions.
The performance is achieved by up to 8.8-V gate drive voltage, 14-ns adaptive dead-time control, 14-ns propagation delays and high-current 2-A source and 4-A sink drive capability. The 0.4- impedance for the lower gate driver holds the gate of power MOSFET below its threshold and ensures no shoot-through current at high dV/dt phase node transitions. The bootstrap capacitor charged by an internal diode allows use of N-channel MOSFETs in half-bridge configuration.
The TPS28225 features a 3-state PWM input compatible with all multi-phase controllers employing 3-state output feature. As long as the input stays within 3-state window for the 250-ns hold-off time, the driver switches both outputs low. This shutdown mode prevents a load from the reversed- output-voltage.
The other features include under voltage lockout, thermal shutdown and two-way enable/power good signal. Systems without 3-state featured controllers can use enable/power good input/output to hold both outputs low during shutting down.
The TPS28225 is offered in an economical SOIC-8 and thermally enhanced low-size Dual Flat No-Lead (DFN-8) packages. The driver is specified in the extended temperature range of -40°C to 125°C with the absolute maximum junction temperature 150°C.
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