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| Features |
| Description |
The TPS28225 is a high-speed driver for N-channel complimentary driven power MOSFETs with adaptive dead-time control. This driver is optimized for use in variety of high-current one and multi-phase dc-to-dc converters. The TPS28225 is a solution that provides highly efficient, small size low EMI emmissions.
The performance is achieved by up to 8.8-V gate drive voltage, 14-ns adaptive dead-time control, 14-ns propagation delays and high-current 2-A source and 4-A sink drive capability. The 0.4- impedance for the lower gate driver holds the gate of power MOSFET below its threshold and ensures no shoot-through current at high dV/dt phase node transitions. The bootstrap capacitor charged by an internal diode allows use of N-channel MOSFETs in half-bridge configuration.
The TPS28225 features a 3-state PWM input compatible with all multi-phase controllers employing 3-state output feature. As long as the input stays within 3-state window for the 250-ns hold-off time, the driver switches both outputs low. This shutdown mode prevents a load from the reversed- output-voltage.
The other features include under voltage lockout, thermal shutdown and two-way enable/power good signal. Systems without 3-state featured controllers can use enable/power good input/output to hold both outputs low during shutting down.
The TPS28225 is offered in an economical SOIC-8 and thermally enhanced low-size Dual Flat No-Lead (DFN-8) packages. The driver is specified in the extended temperature range of -40°C to 125°C with the absolute maximum junction temperature 150°C.
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